Vapor Phase Growth of β-SiC Whiskers with Fluorosilicate Melt
نویسندگان
چکیده
منابع مشابه
Anisotropic etching of SiC whiskers.
We have demonstrated a method of producing nanoplatelets or complex well-ordered nanostructures from silicon carbide (SiC) whiskers. Preferential etching of SiC whiskers in a mixture of hydrofluoric and nitric acids (3:1 ratio) at 100 degrees C results in the selective removal of cubic SiC and the formation of complex structures resembling a pagoda architecture. Possible mechanisms governing se...
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1 Georgia Institute of Technology/GTL UMI 2958 Georgia Tech-CNRS, 2-3 rue Marconi, 57070 Metz, France 2 Laboratoire Matériaux Optiques, Photonique et micro-nano Systèmes – UMR CNRS 7132, Université de Metz et SUPELEC, 2 rue Edouard Belin, 57070 Metz, France 3 Department of Physics, New Jersey Institute of Technology, Newark, New Jersey 07102, USA 4 Laboratoire de Photonique et de Nanostructures...
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متن کاملEffect of gas phase on SiC and Si 3 N 4 formations from SiO 2
During the synthesis of SiC, Si3N 4 and sialon whiskers by carbothermal reduction of SiO 2, a localized formation of amorphous phases or Si2N20 powders was observed beneath these whiskers. Because these whiskers were formed by the vapour/solid mechanism, the controlling gas phase was of primary importance to obtain whiskers of tailored morphology and chemistry. To elucidate the effect of the ga...
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ژورنال
عنوان ژورنال: Journal of the Ceramic Association, Japan
سال: 1980
ISSN: 0009-0255,1884-2127
DOI: 10.2109/jcersj1950.88.1017_265